0.15μm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value (Special Issue on Heterostructure Electron Devices)
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概要
- 論文の詳細を見る
We have developed a new HIGFET structure achieving an extremely high K-value of 13.3 S / Vcm with a gate length of 0.15 μm. Self-aligned ion implantation is excluded to suppress a short-channel effect. An i-GaAs cap layer and an n^+-GaAs contact layer are employed to reduce source resistance. The threshold voltage shift is as small as 50 mV when the gate length is reduced from 1.5 μm to 0.15 μm. Source resistance is estimated to be 53 mΩcm. We have also developed a new fabrication process that can achieve a shorter gate length than the minimum size of lithography. This process utilizes an SiO_2 sidewall formed on the n^+-GaAs contact layer to reduce the gate length. A gate length of 0.15 μm can be achieved using 0.35 μm lithography.
- 社団法人電子情報通信学会の論文
- 1993-09-25
著者
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MATSUMOTO Hironaga
Department of Electronics and Bioinformatics, Science and Technology, Meiji University
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Ohishi Yasutake
Ntt Opto-electronics Laboratories
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Hosomi Kazuhiko
Nanoelectronics Collaborative Research Center Institute Of Industrial Science University Of Tokyo
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Matsumoto Hironaga
Department Of Electronics And Bioinformatics Science And Technology Meiji University
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Miyazaki M
Hitachi Ltd. Kokubunji‐shi Jpn
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Ohishi Yoshihisa
Ntt Opto-electronics Laboratories
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Matsumoto Hidetoshi
Central Research Laboratory, Hitachi, Ltd.
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Umemoto Yasunari
Central Research Laboratory, Hitachi, Ltd.
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Ohishi Yoshihisa
Central Research Laboratory, Hitachi, Ltd.
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Takahama Mitsuharu
Central Research Laboratory, Hitachi, Ltd.
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Hiruma Kenji
Central Research Laboratory, Hitachi, Ltd.
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Oda Hiroto
Hitachi VLSI Engineering Corporation
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Miyazaki Masaru
Central Research Laboratory, Hitachi, Ltd.
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Imamura Yoshinori
Central Research Laboratory, Hitachi, Ltd.
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Oda H
Hitachi Ulsi Engineering Corp. Tokyo Jpn
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Hiruma Kenji
Central Research Laboratory Hitachi Ltd.
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Haraguchi Kei-ichi
Central Research Laboratory Hitachi Ltd.
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Hiruma K
Central Research Laboratory Hitachi Ltd.
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Oda Hiroto
Hitachi Ulsi Engineering Corporation
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Matsumoto Hidetoshi
Department Of Electronics And Bioinformatics Science And Technology Meiji University
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Imamura Yoshinori
Central Research Laboratory
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Imamura Y
Renesas Device Design Itami‐shi Japan
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Matsumoto Hidetoshi
Central Research Lab. Hitachi Ltd.
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Miyazaki Masaru
Central Research Laboratory Hitachi Ltd.
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Miyazaki Masaru
Science & Technical Research Laboratories Nhk (japan Broadcasting Corporation)
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Takahama Mitsuharu
Central Research Laboratory Hitachi Ltd.
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Umemoto Y
Central Research Laboratory Hitachi Ltd.
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Umemoto Yasunari
Central Research Laboratory Hitachi Ltd.
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