Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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Ito Tomonori
Ntt Atsugi Electrical Communication Laboratories
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Shinohara Masanori
NTT Atsugi Electrical Communication Laboratories
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Imamura Yoshihiro
NTT Atsugi Electrical Communication Laboratories
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ITO Tomonori
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SHINOHARA Masanori
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IMAMURA Yoshihiro
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corp.
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Imamura Yoshihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Shinohara M
Shimadzu Corporation
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Imamura Y
Yamanashi Univ. Kofu Jpn
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Shinohara M
Surface Analysis And Semiconductor Equipment Department Shimadzu Corporation
関連論文
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- Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs Substrates
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
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- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
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