Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-05-25
著者
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Hijikata Yasuto
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
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Yaguchi Hiroyuki
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
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YAMAGATA Hikaru
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University
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YAGI Shuhei
Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University
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Yamagata Hikaru
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
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Yagi Shuhei
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saitama University
関連論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
- Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
- Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
- Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers
- Growth Rate Enhancement of $(000\bar{1})$-Face Silicon–Carbide Oxidation in Thin Oxide Regime