Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
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概要
- 論文の詳細を見る
The exciton phonon interaction in AlGaAs/GaAs and LnGaAs/GaAs single quantum wells (QWs) is studied through the temperature dependence of the oscillator strength of the zero-phonon-line e1-hh1 excitonic transition. It is found that the main phonon modes involved in the exciton phonon interaction are different between these two systems : the confined Phonons in the AlGaAs/GaAs QWs and the three-dimensional phonons in the InGaAs/GaAs QWs.
- 社団法人日本物理学会の論文
- 1994-01-15
著者
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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ZHANG Baoping
Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN)
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Zhang Baoping
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito R
Meiji Univ. Kawasaki
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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