Extended X-Ray-Absorption Fine-Structure Beats : Application to III-V Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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SASAKI Toru
Department of Materials Science and Technology, Iwate University
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ITO Ryoichi
Department of Physics, Meiji University
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Sasaki Takahiko
Institute For Materials Research(imr) Tohoku University
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Onda Tomohiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Sasaki T
Department Of Applied Physics National Defense Academy
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Ito R
Iwate Univ. Morioka Jpn
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Onda T
Univ. Tokyo Tokyo
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Onda T
Processing Development Research Laboratories Kao Corporation
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Osada Toshihito
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Sasaki Toru
Department Of Energy And Environmental Science Utsunomiya University
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Ogasawara N
Univ. Electro‐communications Tokyo Jpn
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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Sasaki Toru
Department of Cardiovascular Medicine, Yamaguchi Rosai Hospital
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