Behavior of Miscibility Gaps in the Phase Diagrams of III-V Semiconductor Solid Solutions : Quaternary Systems of the Type A_xB_<1-x>C_yD_<1-y>
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概要
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The behavior of miscibility gaps in liquid-solid phase diagrams has been studied schematically for III-V semiconductor quaternary solutions of the type A_xB_<1-x>C_yD_<1-y> such as GaInPAs and AlInPAs. The topological features of the liquidus surface affected by solid immiscibility have been the focus of our examination. Liquidus surfaces below the melting temperatures of the constituent binary semiconductors are presented for typical geometric patterns of a miscibility gap. Liquidus surfaces around the melting temperatures are presented for two typical cases realized in systems such as GaInPAs and AlInAsSb.
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Onda Tomohiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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