Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
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概要
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Epitaxial growth by variable-temperature approach and structural characterization of relaxed, ultra thin 50 nm thick, high Ge content Si0.34Ge0.66 epilayers on Si(001) substrate is demonstrated. All epilayers are grown in a single process by solid-source molecular beam epitaxy. Smooth surface and full relaxation of Si0.34Ge0.66 epilayers are achieved by introducing initial seeding layer, with high density of point defects, grown at low-temperature followed by the growth at rapidly elevating substrate temperature. Variation of growth temperature of Si0.34Ge0.66 seeding layer from 50 up to 450 °C exhibits strong effect on changes of surface morphology and appearance of strain in the Si0.34Ge0.66 epilayers. These epilayers grown under optimum conditions can be used as a buffer layer for the growth of semiconductor heterostructures with high hole mobility compressive strained SiGe or Ge quantum wells.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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MYRONOV Maksym
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Techn
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Shiraki Yasuhiro
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, 158-0082 Tokyo, Japan
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Myronov Maksym
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, 158-0082 Tokyo, Japan
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