1.625-μm High-Power Strained Multiple Quantum Well Lasers for Optical Time-Domain Reflectometers

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1997-02-01

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Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode
1.625-μm High-Power Strained Multiple Quantum Well Lasers for Optical Time-Domain Reflectometers
InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode Showing Low Coherence Characteristics Using Selective-Area Metalorganic Vapor Phase Epitaxy

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