InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode Showing Low Coherence Characteristics Using Selective-Area Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 1997-02-01

著者

• KASHIMA Yasumasa

  Optical Device Division, OKI Electric Industry Co., Ltd.,

• Munakata Tsutomu

  Optical Device Division Oki Electric Industry Co. Ltd.

• Matoba Akio

  Optical Device Division Oki Electric Industry Co. Ltd.

• Kashima Yasumasa

  Optical Device Division Oki Electric Industry Co. Ltd.

• KASHIMA Yasumasa

  Optical Device Division, Oki Electric Industry Co., Ltd.

関連論文

• Optical Properties of InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode
• 1.625-μm High-Power Strained Multiple Quantum Well Lasers for Optical Time-Domain Reflectometers
• InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode Showing Low Coherence Characteristics Using Selective-Area Metalorganic Vapor Phase Epitaxy

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