Preparation of SnS Films by Sulfurization of Sn Sheet
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概要
- 論文の詳細を見る
Tin sulfide (SnS) films were grown by sulfurization using an inexpensive Sn sheet and S powder. The Sn sheet was sulfurized in a closed ampoule at a low temperature between 150 and 300 °C. The resulting sulfurized films had a flat surface and large grains, and exhibited adhered very well to the substrate. These samples exhibited X-ray diffraction peaks corresponding to SnS and contained no extra phases. These results represent the first step toward realizing an optical device such as a solar cell using a SnS film grown by a sulfurization method.
- 2008-06-25
著者
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Miyauchi Keisuke
Department Of Bioengineering Nagaoka University Of Technology
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Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
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Noguchi Koji
Department Of Food Science And Technology Faculty Of Agriculture Kyushu University
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Miyauchi Keisuke
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Minemura Takehiro
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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Ohtsuka Kenichi
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Noguchi Koji
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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