Sulfurization Growth of CuInS2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source
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概要
- 論文の詳細を見る
Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CuInS2 films. Single-phase, polycrystalline CuInS2 films were formed in only 15 min when the sulfurization temperature was 575 °C. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CuInS2-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-06-25
著者
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Chichibu Shigefusa
Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba
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Chichibu Shigefusa
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Fujiwara Chika
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Shoji Ryuki
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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