Photoluminescence Property of ZnSnP2 by Solution Growth and Normal Freezing Methods
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概要
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The photoluminescence (PL) spectra of the bulk ZnSnP2 crystals grown by the solution growth (SG) and normal freezing (NF) methods are studied. The donor–acceptor pair transition, which possibly originates from the transition from the levels of Sn at Zn sites (SnZn) to the Zn vacancy (VZn) levels, is observed using the crystals grown by SG method. The ionization energies of the SnZn and VZn levels are estimated to be approximately 110 and 40–50 meV, respectively. The PL spectra of the crystals grown by SG method exhibits free-to-bound transition. These results are the first step toward realizing the novel function or optical devices as a solar cell using ZnSnP2.
- 2008-07-25
著者
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Miyauchi Keisuke
Department Of Bioengineering Nagaoka University Of Technology
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Shirakata Sho
Department Of Electric And Electronic Engineering Faculty Of Engineering Ehime University
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SUGIYAMA Mutsumi
Department of Electrical Engineering, Science University of Tokyo
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Nakanishi Hisayuki
Department Of Electrical Engineering Faculty Of Science And Technology
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Nakatani Keigo
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Minemura Takehiro
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Fukabori Kenji
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Miyauchi Keisuke
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Minemura Takehiro
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Cniba 278-8510, Japan
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