Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells
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概要
- 論文の詳細を見る
Tin sulphide is considered to be a potential candidate for the development of low cost polycrystalline thin film solar cells. The advantages of using sulfurization process to grow SnS films were demonstrated. Polycrystalline p-type SnS films were obtained by a simple dry process at 300 °C for 90 min. The sulfurization condition depends on the deposition method of the Sn precursor. Using single-phase SnS films, band discontinuities at SnS/CdS and SnO2/SnS heterointerfaces were measured by X-ray photoelectron spectroscopy. The valence band offsets were determined to be approximately 1.5 eV for SnS/CdS and 3.5 eV for SnO2/SnS interfaces. Using these values and the energy band gaps of the corresponding layers, the energy band diagram was developed. It indicated that the SnS/CdS heterojunction is of TYPE-II form of heterostructure. This result indicated that SnS-related solar cells with CdS as window layer do not have an ideal band structure that could give high conversion efficiency.
- 2011-05-25
著者
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Sato Tomoaki
Department Of Applied Pharmacology Kagoshima University Graduate School Of Medical And Dental Scienc
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Reddy K.
Department Of Aerospace Engineering Indian Institute Of Science
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Murata Yoshitsuna
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Shimizu Tsubasa
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Ramya Kottadi
Department of Physics, Sri Venkateswara University, Tirupati 517502, India
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Venkataiah Chinna
Department of Physics, Sri Venkateswara University, Tirupati 517502, India
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REDDY K.
Departmant of Agronomy, Mississippi State University
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