Photoluminescence Study of Defect Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide
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概要
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The defect-related photoluminescence (PL) levels of CuInS2 thin films prepared by sulfurization using ditertiarybutylsulfide [(t-C4H9)2S: DTBS] have been investigated. The PL spectra exhibit three low-energy peaks at 1.37, 1.34, and 1.24 eV. On the basis of these PL spectra observed at different excitation intensities, the emissions are attributed to donor--acceptor pair transitions. The ionization energies of donors in CuInS2 thin films are determined to be 125, 150, and 280 meV, which are, respectively, due to indium atom-occupied copper vacancies (In\text{Cu), sulfur vacancies (V\text{S), and sulfur atom-occupied copper vacancies (S\text{Cu); whereas that of the acceptor is determined to be 100 meV and has been reported to the copper vacancy (V\text{Cu). Using these data, a band diagram for the defect levels of CuInS2 thin films prepared by sulfurization is proposed.
- 2012-03-25
著者
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LIU Xiaohui
Department of Chemistry, The Research-Education Centre of Risk Science, Faculty and Graduate School
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Chichibu Shigefusa
Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba
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Sugiyama Mutsumi
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
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Dou Xiaoming
Department of Physics, Optical Engineering, Shanghai Jiao Tong University, Minhang, Shanghai 200240, P. R. China
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Fujiwara Chika
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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