Optical and Solar Cell Properties of Alpha-ray, Proton, and Gamma-ray Irradiated Cu(In,Ga)Se2 Thin Films and Solar Cells

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概要

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• The effects of alpha-ray, proton, and gamma-ray irradiation on the electrical properties of Cu(In,Ga)Se2 (CIGS) solar cells and the photoluminescence spectra of CIGS and CuInSe2 (CIS) thin films were investigated. Particle irradiation using alpha-ray and proton primarily degraded the interfaces of CIGS solar cells, even though the CIS and CIGS thin films did not degraded, in the case of a low irradiation fluence of the order of $10^{9}$ cm-2. On the other hand, CIS and CIGS showed good tolerance to gamma-ray irradiation because the impact of wave radiation is insufficient to degrade the crystal, in comparison with particle radiation. These results will become the first step toward realizing practical applications of CIGS solar cells in space and clarifying their degradation mechanism.

• 2010-04-25

著者

• Nakanishi Hisayuki

  Department Of Electrical Engineering Faculty Of Science And Technology

• Shigefusa F.

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

• Sugiyama Mutsumi

  Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

• Mutsumi Sugiyama

  Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

• Shinichi Kimura

  Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

• Yasuniwa Toshihiro

  Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

• Toshihiro Yasuniwa

  Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

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