Electronic Structure and Spontaneous Polarization in Sc[x]Al[y]Ga₁₋x₋yN Alloys Lattice-Matched to GaN : A First-Principles Study (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Sota Takayuki
Department Of Electric Electronics And Computer Engineering Waseda University
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Chichibu Shigefusa
Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba
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SHIMADA Kazuhiro
Department of Electric, Electronics, and Computer Engineering, Waseda University
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Sazawa Hiroyuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Hata Masahiro
Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Takada Tomoyuki
Tsukuba Research Laboratory, Sumitomo-Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Sota Takayuki
Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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- Electronic Structure and Spontaneous Polarization in Sc[x]Al[y]Ga₁₋x₋yN Alloys Lattice-Matched to GaN : A First-Principles Study (Special Issue : Recent Advances in Nitride Semiconductors)
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