Piezo- and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition (Special Issue: Ferroelectric Materials and Their Applications)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- PbTiO_3- and Pb(Zr,Ti)O_3-Covered ZnO Nanorods
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- Piezo- and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition (Special Issue: Ferroelectric Materials and Their Applications)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- I層にMgOを用いたMIS及びMFIS構造の作製とその評価
- High-Accuracy Proximity Effect Correction for Mask Writing
- Multiferroism at Room Temperature in BiFeO_3/BiCrO_3(111) Artificial Superlattices
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- p-type InGaN cap layer for normally off operation in AlGaN/GaN heterojunction field effect transistors (Special issue: Solid state devices and materials)
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator (Special issue: Solid state devices and materials)
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- DETECTION OF ACTIVE OXYGEN GENERATED FROM CERAMIC POWDERS HAVING ANTIBACTERIAL ACTIVITY
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- EFFECT OF PARTICLE SIZE AND HEATING TEMPERATURE OF CERAMIC POWDERS ON ANTIBACTERIAL ACTIVITY OF THEIR SLURRIES
- EFFECT OF CERAMIC POWDER SLURRY ON SPORES OF BACILLUS SUBTILIS
- MUTAGENICITY TEST OF CERAMIC POWDER WHICH HAVE GROWTH INHIBITORY EFFECT ON BACTERIA
- INJURY OF Escherichia coli IN PHYSIOLOGICAL PHOSPHATE-BUFFERED SALINE INDUCED BY FAR-INFRARED IRRADIATION
- EVALUATION OF GROWTH INHIBITORY EFFECT OF CERAMICS POWDER SLURRY ON BACTERIA BY CONDUCTANCE METHOD
- IRRADIATION POWER EFFECT ON IR PASTEURIZATION BELOW LETHAL TEMPERATURE OF BACTERIA
- FAR-INFRARED IRRADIATION EFFECT ON PASTEURIZATION OF BACTERIA ON OR WITHIN WET-SOLID MEDIUM
- EFFECT OF FAR-INFRARED IRRADIATION ON PASTEURIZATION OF BACTERIA SUSPENDED IN LIQUID MEDIUM BELOW LETHAL TEMPERATURE
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition