Ichikawa Masakazu | Joint Research Center For Atom Technology
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概要
関連著者
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ishida M
Sii Nanotechnology Inc.
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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IWASA Masayuki
SII Nanotechnology Inc.
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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Fujita J
Crest-jst
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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FUJITA Jun-ichi
CREST JST, Japan Science and Technology Co.
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ISHIDA Masahiko
CREST JST, Japan Science and Technology Co.
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OCHIAI Yukinori
CREST JST, Japan Science and Technology Co.
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Doi Takahisa
Central Research Laboratory, Hitachi Ltd.
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Doi Takahisa
Central Research Laboratory
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ISHIDA Masahiko
NEC Fundamental and Environmental Research Laboratories
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OCHIAI Yukinori
NEC Fundamental and Environmental Research Laboratories
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Fujita Jun-ichi
Nec Fundamental Research Laboratories
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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WATANABE Heiji
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Morita Takahiko
Crest-jst
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KAITO Takashi
Seiko Instruments Inc.
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Watanabe Heiji
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Kometani Reo
Univ. Tokyoi Tokyo Jpn
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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KAITO Takashi
SII NanoTechnology Inc.
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MATSUI Shinji
Himeji Institute of Technology, Graduate School of Science, LASTI
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Haruyama Y
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Haruyama Yuichi
Uvsor Facility Institute For Molecular Science:(present Address)laboratory Of Advanced Science And T
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OKADA Satoshi
CREST-JST
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MUKAWA Takahito
CREST-JST
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KOBAYASHI Ryota
CREST-JST
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MATSUI Shinji
CREST-JST
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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HOSOKI Shigeyuki
Central Research Laboratory, Hitachi, Ltd.
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Hosoki S
Central Research Laboratory
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Hosoki Shigeyuki
Central Research Laboratory Hitachi Ltd.
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Miyata Noriyuki
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C/o National I
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Hosoki Shigeyuki
Central Research Laboratory
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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山田 晃
東京農工大学生物システム応用科学府
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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ICHIKAWA Mitsuru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Fujita K
Oki Electric Industry Co. Ltd. Tokyo
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Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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Kanda Kazuhiro
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Hoshino Takayuki
Crest Japan Science And Technology Co. (jst)
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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KONDO Kazushige
CREST JST, Japan Science and Technology Co.
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KOMETANI Reo
Himeji Institute of Technology, Graduate School of Science, LASTI
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KANDA Kazuhiro
Himeji Institute of Technology, Graduate School of Science, LASTI
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HARUYAMA Yuichi
Himeji Institute of Technology, Graduate School of Science, LASTI
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Haruyama Yuichi
Institute Of Physics University Of Tsukuba
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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ICHIHASHI Toshinari
CREST JST, Japan Science and Technology Co.
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KAITO Takashi
CREST JST, Japan Science and Technology Co.
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Ochiai Yukinori
System Devices And Fundamental Research Nec Corporation
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Ninomiya Kunimoto
New Materials Research Center Sanyo Electric Co. Ltd.
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Ninomiya Kunimoto
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Shklyaev Alexander
Joint Research Center For Atom Technology
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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WATANABE Heiji
Fundamental Research Laboratories, NEC Corporation
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NINOMIYA Ken
Central Research Laboratory, Hitachi, Ltd.
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Fujita K
Univ. Tokyo Tokyo Jpn
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Ninomiya K
Central Research Laboratory
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Ninomiya Ken
Central Research Laboratory Hitachi Ltd.
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Okada Makoto
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Watanabe H
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kanda K
Himeji Institute Of Technology Graduate School Of Science Lasti
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Watanabe Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Nakamatsu Kenichiro
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Nakamatsu Ken-ichiro
Laboratory Of Advanced Science And Technology For Industry (lasti) Graduate School Of Science Univer
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NINOMIYA Ken
Central Research Laboratory
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Fujita Jun-ichi
CREST JST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Ishida Masahiko
CREST JST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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KAITO Takashi
SII Nano Technology Inc.
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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KONAGAI Makoto
Tokyo Institute of Technology
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TSUSIMA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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Sawada Toru
Kaneka Corporation
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Kometani Reo
Graduate School Of Engineering University Of Tokyo
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Hiroshima H
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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NAMATSU Hideo
NTT Basic Research Laboratories
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Kanda Kazuhiro
Graduate School Of Science And Laboratory Of Advanced Science And Technology For Industry Himeji Ins
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Kanda Kazuhiro
University Of Hyogo Laboratory Of Advanced Science And Technology For Industry
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Fujita Shinobu
O National Institute For Advanced Interdisciplinary Research (nair)
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山田 晃
東京農工大学生物システム応用科学研究科
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KOMETANI Reo
University of Hyogo, Graduate School of Science, LASTI
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HARUYAMA Yuichi
University of Hyogo, Graduate School of Science, LASTI
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MATSUI Shinji
University of Hyogo, Graduate School of Science, LASTI
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Ishizaka Akitoshi
Central Research Laboratory Hitachi Ltd.
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Lee Jung-ho
Joint Research Center For Atom Technology Aist
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MATSUI Shinji
Graduate School of Science, University of Hyogo
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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MARUNO Shigemitsu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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FUJITA Ken
o National Institute for Advanced Interdisciplinary Research (NAIR)
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Haruyama Yuichi
Graduate School Of Science And Laboratory Of Advanced Science And Technology For Industry Himeji Ins
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SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
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NAKAMATSU Ken-ichiro
Graduate School of Science, LASTI, Himeji Institute of Technology
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KOMURO Masanori
Advanced Semiconductor Research Center, AIST
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MORITA Takahiko
Himeji Institute of Technology, Graduate School of Science, LASTI
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WATANABE Keiichiro
Himeji Institute of Technology, Graduate School of Science, LASTI
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TAJIMA Tsutomu
Crestec Co.
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Ogura Takashi
Silicon Systems Research Laboratories Nec Corporation
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SAKAMOTO Toshitsugu
NEC Fundamental Research Laboratories
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ICHIHASHI Toshinari
NEC Fundamental Research Laboratories
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Ishigaki Hiroyuki
Laboratory Of Advanced Science And Technology Himeji Institute Of Technology
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Ichikawa Mitsuru
Kaneka Corporation
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Yamamoto K
Kaneka Corporation
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NAKAJIMA Akihiko
Kaneka Corporation
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YOSHIMI Masashi
Kaneka Corporation
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YAMAMOTO Kenji
Kaneka Corporation
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Tsusima Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takeshita Jun
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SHIBATA Motoshi
Joint Research Center for Atom Technology
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Nakajima A
Kaneka Corporation
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MATSUI Shinji
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology
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Ishida Masahiko
Fundamental And Environmental Research Laboratories Nec Corporation
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Matsui S
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Namatsu H
Ntt Basic Res. Lab. Kanagawa Jpn
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Komuro M
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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FUJITA Ken
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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Ichikawa Masakazu
Joint Research Center For Atom Technology National Institute Of Advanced Industrial Science And Tech
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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MIYATA Noriyuki
Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Tec
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Delian WANG
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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IGAKU Yutaka
Laboratory of Advanced Science and Technology, Himeji Institute of Technology
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HIROSHIMA Hiroshi
Advanced Semiconductor Research Center; AIST
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Physics Yamanashi University
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Matsui Shinji
Graduate School Of Science Laboratory Of Advanced Science And Technology For Industry (lasti) Univer
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Yoshida S
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Igaku Yutaka
Laboratory Of Advanced Science And Technology Himeji Institute Of Technology
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OHSHIMA Eiji
Tsukuba Research Laboratories, Tokuyama Corp.
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MOMODA Junji
Tsukuba Research Laboratories, Tokuyama Corp.
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KOBAYASHI Kenji
NEC Fundamental Research Laboratories
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YAMAMOTO Hiromasa
Tsukuba Research Laboratories
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TONO Seiji
Tsukuba Research Laboratories
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Delian Wang
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Maruno Shigemitsu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Miyata Noriyuki
Joint Research Center For Atom Technology National Institute Of Advanced Industrial Science And Tech
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Hoshino Takayuki
Crest Jst Japan Science And Technology Co.
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Yamamoto H
Tsukuba Research Laboratories
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Matsui Shinji
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Matsui Shinji
Laboratory Of Advanced Science And Technology For Industry (lasti) Graduate School Of Science Univer
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Matsui Shinji
Graduate School Of Science And Laboratory Of Advanced Science And Technology For Industry Himeji Ins
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C/o National I
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Ichikawa Masakazu
Joint Research Center For Atom Technology Aist
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Ichikawa Masakazu
Joint Research Center For Atom Technology National Institute Of Advanced Industrial Science And Tech
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Ichihashi T
Nec Fundamental Research Laboratories
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Matsui Shinji
University Of Hyogo
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Matsui Shinji
Laboratory Of Advanced Science And Technolgy For Industory Himeji Institute Of Technology
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Hoshino Takayuki
Graduate School Of Bio-application And System Engineering Tokyo University Of Agriculture And Technology
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Okada Makoto
Univ. Hyogo Hyogo Jpn
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Haruyama Yuichi
University of Hyogo, Graduate School of Science, Laboratory of Advanced Science and Technology for Industry (LASTI), 3-1-2 Koto, Kamigori, Hyogo 678-1205, Japan
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Shklyaev Alexander
Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan
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Tsushima Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Wang Delian
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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Kobayashi Ryota
CREST JST, Japan Science and Technology Co., 4-1-8, Hon-cho, Kawaguchi, Saitama 332-0012, Japan
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Kaito Takashi
SII Nano Technology Inc., 36-1 Takenoshita, Oyama, Shizuoka 410-1393, Japan
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MIYATA Noriyuki
Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST)
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Ichikawa Masakazu
Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan
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Nakamatsu Ken-ichiro
Graduate School of Science, Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo
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Matsui Shinji
CREST JST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Okada Satoshi
CREST JST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Mukawa Takahito
CREST JST, Japan Science and Technology Co., 4-1-8, Hon-cho, Kawaguchi, Saitama 332-0012, Japan
著作論文
- Room Temperature Nanoimprinting Using Release-Agent Spray-Coated Hydrogen Silsesquioxane
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
- Characteristics of Nano-Electrostatic Actuator Fabricated by Focused Ion Beam Chemical Vapor Deposition
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
- Growth Manner and Mechanical Characteristics of Amorphous Carbon Nanopillars Grown by Electron-Beam-Induced Chemical Vapor Deposition
- Position-Controlled Carbon Fiber Growth Catalyzed Using Electron Beam-Induced Chemical Vapor Deposition Ferrocene Nanopillars
- Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition
- Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
- Spectral Characteristics of Thin-Film Stacked-Tandem Solar Modules
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy
- Layer-by-Layer Oxidation of Si(001) Surfaces
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
- A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
- Diffusion Constants of Si Adsorbates on a Si(001) Surface
- Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
- Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
- Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
- Anisotropic Diffusion of Si Adsorbates on a Si (001) Surface
- Direct Observation of Electron Charge of Si Atoms on a Si(001) Surface
- Scanning Tunneling Microscopy Study of Hf Silicate Formed by Ulttrathin Hf Metal on SiO_2 : Effect of Hf/SiO_2 Thickness Ratio
- Evaluation of fluorinated diamond like carbon as antisticking layer by scanning probe microscopy
- Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
- Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
- Atomic-Scale Structure of SiO_2/Si(001) Interface Formed by Furnace Oxidation
- Electron-beam Initiated Transfer of Ge from Ge Islands on SiO2 Surfaces to the Tip of a Scanning Tunneling Microscope