Ichikawa Masakazu | Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)

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概要

関連著者

YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
Ichikawa Masakazu
Joint Research Center For Atom Technology
Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
Delian WANG
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
Yoshida S
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
Delian Wang
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
Wang Delian
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)

著作論文

A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics

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