ICHIKAWA Masakazu | Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c

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著作論文

Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy
Electron-beam Initiated Transfer of Ge from Ge Islands on SiO_2 Surfaces to the Tip of a Scanning Tunneling Microscope
Layer-by-Layer Oxidation of Si(001) Surfaces
Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
Diffusion Constants of Si Adsorbates on a Si(001) Surface
Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
Anisotropic Diffusion of Si Adsorbates on a Si (001) Surface
Direct Observation of Electron Charge of Si Atoms on a Si(001) Surface
Scanning Tunneling Microscopy Study of Hf Silicate Formed by Ulttrathin Hf Metal on SiO_2 : Effect of Hf/SiO_2 Thickness Ratio
Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces

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