Ninomiya K | Central Research Laboratory

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概要

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著作論文

Low-Hydrogen-Content, Stable Amorphous Silicon Thin Films Prepared by Ion-Assisted Method
High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
Nondestructive Depth Profile Analysis by Changing Escape Depth of Photoelectrons
Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
Amorphous Silicon-Carbon Alloy Prepared by the CMP (Controlled Plasma Magnetron) Method
Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
Diffusion Constants of Si Adsorbates on a Si(001) Surface
Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
Si Etching with a Hot SF_6 Beam and the Etching Mechanism
Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge
Si Etching with a Hot SF_6 Beam
Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching

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