Tsuda Shinya | Functional Materials Research Center, SANYO Co., Ltd., 1-18-13 Hashiridani, Hirakata City, Osaka 573

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著作論文

Film Property Control of Hydrogenated Amorphous Silicon Germanium for Solar Cells
Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
Trapping and Recormbination of Photogenerated Carriers in As-Growrn High-Temperature-Annealed and Light-Soaked a-Si:H
Dependence of Open Circuit Voltage of Amorphous Silicon Solar Cells on Thickness and Doping Level of the p-Layer
High-Performance a-SiGe Solar Cells Using a Super Chamber Method
Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
High-Quality p-Type μc-Si Films Prepared by the Solid Phase Crystallization Method
Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method
Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H
Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
Preparation of a-Si and a-Si-Alloy Films Using an Ion-Gun Chemical Vapor Deposition Method
Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
Amorphous Silicon-Carbon Alloy Prepared by the CMP (Controlled Plasma Magnetron) Method
Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method
High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3
Approach from a-Ge Films for Development of High-Quality a-SiGe Films
The Influence of the Si–H2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

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