Watanabe Katsuyuki | National Research Institute For Metals : Department Of Material Science And Technology Science Unive

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概要

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著作論文

Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells
InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
b initio Study on the Electronic States of Hydrogen Defects in Diamond Subsurfaces
New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
Ab Initio Study of Hydrogen Desorption from Diamond C(100) Surfaces
A New Single-Layer Resist for 193-nm Lithography
Study of Bi-level Resist System with Conductive Bottom Layer for EB Lithography
A Novel Polymer for a 193-nm Resist
Study of Oxygen-Deficient Centers in SiO_2 Films Using Photoluminescence Spectra
Observation of Langmuir-Blodgett Films by Scanning Tunneling Microscopy : Surfaces, Interfaces and Films
Measurement of Local Density of States by Scanning Tunneling Spectroscopy at Low Temperature : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Charge Density Waves
Effect of Atomic Force on the Surface Corrugation of 2H-NbSe_2 Observed by Scanning Tunneling Microscopy
Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
Properties and Photovoltaic Characteristics of a-SiC : H Film : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization

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