OHNISHI Michitoshi | Research Center, SANYO Electric Co., Ltd.

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著作論文

Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
Raman Study on the Silicon Network of Hydrogenated Amorphous Silicon Films Deposited by a Glow Discharge
Preparation and Properties of a-SiGe:H Films Fabricated with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
A New Analytical Method of Amorphous Silicon Solar Cells
Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
Energy Conversion Process of p-i-n Amorphous Si Solar Cells
Properties and Photovoltaic Characteristics of a-SiC : H Film : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
A New Integrated Type Amorphous Si Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
Effects of Surface Conditions of Substrates upon Performance of a-Si Photovoltaic Cells : III-1: AMORPHOUS SOLAR CELLS : Film Deposition
Properties of Amorphous Si:F:H Film and Its Photovoltaic Characteristics : III-1: AMORPHOUS SOLAR CELLS : Film Deposition
Amorphous Si Photovoltaic Cells and Cell Module : Integrated Cell Module : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
Preparation and Properties of Amorphous Silicon Produced by a Consecutive, Separated Reaction Chamber Method

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