Hishikawa Y | New Materials Research Center Sanyo Electric Co. Ltd.

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著作論文

Influence of Oxygen and Nitrogen in the Intrinsic Layer of a-Si:H Solar Cells
Analysis of Amorphous Silicon Solar Cells by the Photocurrent-Separation Method
Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
New Interpretation of the Effect of Hydrogen Dilution of Silane on Glow-Discharged Hydrogenated Amorphous Silicon for Stable Solar Cells
Effect of Heating SiH_4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon ( Plasma Processing)
High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
Raman Study on the Silicon Network of Hydrogenated Amorphous Silicon Films Deposited by a Glow Discharge
Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
Preparation and Properties of a-SiGe:H Films Fabricated with a Super Chamber (Separated Ultra-High Vacuum Reaction Chamber)
Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
A New Analytical Method of Amorphous Silicon Solar Cells

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