Nakamura N | Tokyo Inst. Technol. Yokohama Jpn

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著作論文

Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
Trapping and Recormbination of Photogenerated Carriers in As-Growrn High-Temperature-Annealed and Light-Soaked a-Si:H
Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
High-Performance a-SiGe Solar Cells Using a Super Chamber Method
Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H
Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
A New Analytical Method of Amorphous Silicon Solar Cells
Recording Characteristics of Ge Doped Eutectic SbTe Phase Change Discs With Various Compositions and Its Potential for High Density Recording
Light-Induced Effect of a-Si Films Fabricated Using the Super Chamber
High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
Improvement in Parameter Spreads of YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions
YBa_2Cu_3O_x Crossover Structures Using CeO_2 Film as Insulating Layer
Scaling Behavior of YBaCuO/PrBaCuO/YBaCuO Trilayer Josephson Junctions
Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization

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