Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-01
著者
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology National Institute Of Advanced Industrial Science And Tech
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MIYATA Noriyuki
Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Tec
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Miyata Noriyuki
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C/o National I
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MIYATA Noriyuki
Joint Research Center for Atom Technology, National Institute of Advanced Industrial Science and Technology (JRCAT-AIST)
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