Electron-beam Initiated Transfer of Ge from Ge Islands on SiO_2 Surfaces to the Tip of a Scanning Tunneling Microscope
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-01
著者
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Shklyaev Alexander
Joint Research Center For Atom Technology
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Shklyaev Alexander
Joint Research Center For Atom Technology (jrcat) Angstrom Technology Partnership (atp)
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- Scanning Tunneling Microscopy Study of Hf Silicate Formed by Ulttrathin Hf Metal on SiO_2 : Effect of Hf/SiO_2 Thickness Ratio
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Electron-beam Initiated Transfer of Ge from Ge Islands on SiO2 Surfaces to the Tip of a Scanning Tunneling Microscope