A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-07-15

著者

• YOSHIDA Seikoh

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd

• ICHIKAWA Masakazu

  Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c

• Ichikawa Masakazu

  Joint Research Center For Atom Technology

• Yoshida Seikoh

  Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)

• Delian WANG

  Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)

• Yoshida S

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Delian Wang

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)

• Wang Delian

  Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)

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