Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)
スポンサーリンク
概要
- 論文の詳細を見る
We propose a novel Schottky barrier diode with a dual Schottky structure combined with an AlGaN/GaN heterostructure. The purpose of this diode was to lower the on-state voltage and to maintain the high reverse breakdown voltage. An AlGaN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The Schottky barrier diode with a dual Schottky structure was fabricated on the AlGaN/GaN heterostructure. As a result, the on-voltage of the diode was below 0.1 V and the reverse breakdown voltage was over 350 V.
- 社団法人電子情報通信学会の論文
- 2005-04-01
著者
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YOSHIDA Seikoh
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd
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Wada Takahiro
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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IKEDA Nariaki
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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LI Jiang
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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TAKEHARA Hironari
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
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Ikeda Nariaki
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Takehara Hironari
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Li Jiang
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Yoshida Seikoh
Furukawa Electric Co. Ltd. Yokohama Jpn
関連論文
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- Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
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