Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
スポンサーリンク
概要
- 論文の詳細を見る
GaN with an n-p-n structure was grown using gas-source molecular beam epitaxy (GSMBE). We fabricated an n-p-n GaN bipolar junction transistor. The high-temperature reliability of the bipolar junction transistor (BJT) was investigated. That is, the lifetime performance of the BJT at 300℃ was examined during continuous current injection at 300℃. We confirmed that the performance of the bipolar transistor at 300℃ did not change for over 300 h. No degradation of the metal-semiconductor interface was observed by transmission electron microscopy (TEM). The reliability of the GaN BJT at 300℃ was thus confirmed.
- 社団法人応用物理学会の論文
- 1999-08-01
著者
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Yoshida Seikoh
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Suzuki Joe
Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.
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Suzuki Joe
Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.
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