High Power AIGaN/GaN HFET

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概要

• 論文の詳細を見る
• 一般社団法人電子情報通信学会の論文
• 2003-04-01

著者

• Yoshida Seikoh

  Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.

• Yoshida Seikoh

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.

関連論文

• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
• Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
• Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
• Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates
• Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
• High Power AIGaN/GaN HFET
• Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
• Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
• Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer

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