Li Jiang | Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

スポンサーリンク

概要

• LI Jiangの詳細を見る
• 同名の論文著者
• Yokohama R&d Laboratories The Furukawa Electric Co. Ltdの論文著者

関連著者

• Li Jiang

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Yoshida Seikoh

  Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.

• YOSHIDA Seikoh

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd

• Wada Takahiro

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• IKEDA Nariaki

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.

• LI Jiang

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.

• TAKEHARA Hironari

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.

• Ikeda Nariaki

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Takehara Hironari

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Yoshida Seikoh

  Furukawa Electric Co. Ltd. Yokohama Jpn

• Ootomo Shinya

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.

• Sawano Kentarou

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Nomura Takehiko

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd.

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Niiyama Yuki

  Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan

• Kambayashi Hiroshi

  Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan

• Kambayashi Hiroshi

  Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan

• Niiyama Yuki

  Yokohama R&D Laboratory, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan

もっと見る 閉じる

著作論文

• Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

スポンサーリンク