Takemura Riichiro | Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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概要
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- 同名の論文著者
- Department Of Electrical And Electronic Engineering Tokyo Institute Of Technologyの論文著者
関連著者
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Suhara M
Tokyo Metropolitan Univ. Tokyo Jpn
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Furuya K
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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TAKEMURA Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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OOBO Takashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NAKAMURA Yuji
Graduate School of Energy Science, Kyoto University
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Nakamura Y
Kyoto Univ. Uji Jpn
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SATO Ken
Department of Dermatology, Iwate Medical University School of Medicine
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SATO Kuninori
National Institute for Fusion Science
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Nakamura Yuji
Department of Pharmacology, School of Medicine, Toho University, Japan
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Nakamura Yuji
The Division of Cardiolagy, National Medical Center Hospital
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Sato Kuninori
Institute For Fusion Science
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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Sasaki K
Nagoya Univ. Nagoya Jpn
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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SUHARA Michihiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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HONJI Hidetaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Honji Hidetaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SATO Kazuo
Faculty of Education, Tokusima University
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MIYAMOTO Yasuyuki
the Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
the Department of Physical Electronics, Tokyo Institute of Technology
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TAKEMURA Riichiro
the Department of Elec trical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of
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NAGAO Chuma
Department of Electrical and Electric Engineering, Tokyo Institute of Technology
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Nakamura Yuji
Department Of Materials Engineering Graduate School Of Engineering The University Of Tokyo:crest Jap
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Nagao Chuma
Department Of Electrical And Electric Engineering Tokyo Institute Of Technology
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Sato Ken
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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Nakamura Yuji
Department Of Agricultural Chemistry Faculty Of Agriculture Kyushu University
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Nakamura Yuji
The Department Of Internal Medicine International Medical Center Of Japan
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Suhara Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology,
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Takemura Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
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Miyamoto Yasuyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
著作論文
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE
- Monolayer Steps Formation in InP and GaInAs by OMVPE and Reduction of Resonant Energy Width in GaInAs/InP RTDs
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes