Saito Hisashi | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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Saito Hisashi
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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齋藤 尚史
東京工業大学
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Saito Hisashi
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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SAITO Hisashi
Department of Internal Medicine, Kido Hospital
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Suwa Akira
Department Of Internal Medicine And Pathology School Of Medicine Keio University
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Matsumoto Yutaka
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Furuya Kazuhito
Tokyo Institute Of Technology
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Hasegawa Takashi
Department Of Biology Division Of Natural Science International Christian University
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Furuya Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2 O-okayama, Meguro, Tokyo 152-8552, Japan
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Furuya Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Hino Takahiro
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oono Masaya
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Matsumoto Yutaka
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2 O-okayama, Meguro, Tokyo 152-8552, Japan
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Miyamoto Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2 O-okayama, Meguro, Tokyo 152-8552, Japan
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Hasegawa Takashi
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
- Vertical InGaAs Channel Metal--Insulator--Semiconductor Field Effect Transistor with High Current Density
- Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region
- InP/InGaAs Hot Electron Transistors with Insulated Gate
- Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain