Saito Hisahi | Department Of Physical Electronics Tokyo Institute Of Technology

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概要

• 同名の論文著者
• Department Of Physical Electronics Tokyo Institute Of Technologyの論文著者

関連著者

• Saito Hisahi

  Department Of Physical Electronics Tokyo Institute Of Technology

• MIYAMOTO Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology

• FURUYA Kazuhito

  Department of Physical Electronics, Tokyo Institute of Technology

• Furuya Kazuhito

  Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Tokyo Inst. Technol. Tokyo Jpn

• Furuya Kazuhito

  Department Of Electrical And Electronic Engineering

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• 齋藤 尚史

  東京工業大学

• Saito Hisashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• Kanazawa Toru

  Department of Physical Electronics, Tokyo Institute of Technology

• Kanazawa Toru

  Department Of Physical Electronics Tokyo Institute Of Technology

• Saito Hisashi

  Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Miyamoto Yasuyuki

  Tokyo Institute of Technology

• KANAZAWA Toru

  Tokyo Institute of Technology, Department of Physical Electronics

• WAKABAYASHI Kazuya

  Tokyo Institute of Technology, Department of Physical Electronics

• SAITO Hisashi

  Tokyo Institute of Technology, Department of Physical Electronics

• TERAO Ryousuke

  Tokyo Institute of Technology, Department of Physical Electronics

• IKEDA Shunsuke

  Tokyo Institute of Technology, Department of Physical Electronics

• MIYAMOTO Yasuyuki

  Tokyo Institute of Technology, Department of Physical Electronics

• FURUYA Kazuhito

  Tokyo Institute of Technology, Department of Physical Electronics

• Furuya Kazuhito

  Tokyo Institute Of Technology Dept. Of Physical Electronics

• Ikeda Shunsuke

  Department Of Physical Electronics Tokyo Institute Of Technology

• Terao Ryousuke

  Department Of Physical Electronics Tokyo Institute Of Technology

• Wakabayashi Kazuya

  Tokyo Institute Of Technology Department Of Physical Electronics

• Saito Hisashi

  Tokyo Inst. Technol. Tokyo Jpn

• Kanazawa Toru

  Tokyo Institute Of Technology

• Ikeda Shunsuke

  Tokyo Institute Of Technology

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著作論文

• Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
• Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7MA/cm^2
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
• 招待講演 InGaAs/InP MISFET with epitaxially grown source (Electron devices)
• Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain

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