YAMAGAMI Shigeharu | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

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概要

• 同名の論文著者
• Department of Electrical and Electronic Engineering, Tokyo Institute of Technologyの論文著者

関連著者

• YAMAGAMI Shigeharu

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• YAMAGAMI Shigeharu

  Silicon Systems Research Labs.

• Asada Masahiro

  Department of Neurosurgery, Chibune Hospital

• Itoh Atsushi

  Department of Arrhythmia and Electrophysiology, Shizuoka Saiseikai General Hospital

• Itoh Atsushi

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Asada Masahiro

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• MIYAMOTO Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology

• FURUYA Kazuhito

  Department of Physical Electronics, Tokyo Institute of Technology

• Saito W

  Tokyo Inst. Technol. Tokyo Jpn

• Saito Wataru

  Institute Of Agriculture And Forestry University Of Tsukuba

• SAITOH Wataru

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Itoh A

  Ricoh Co. Ltd. Miyagi Jpn

• Arai T

  Department Of Physical Electronics Tokyo Institute Of Technology

• Saitoh Wataru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Saito W

  Toshiba Corp. Kawasaki Jpn

• Miyamoto Y

  Department Of Physical Electronics Tokyo Institute Of Technology

• ARAI Toshiki

  Department of Physical Electronics, Tokyo Institute of Technology

• Furuya Kazuhito

  Department Of Electrical And Electronic Engineering

• Itoh A

  Tokyo Inst. Technol. Tokyo Jpn

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Furuya K

  Department Of Physical Electronics Tokyo Institute Of Technology

• Itoh Atsushi

  Department Of Applied Chemistry Tokai University

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• HARADA Yoshimichi

  the Department of Physical Electronics, Tokyo Institute of Technology

• HARADA Yoshimichi

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Harada Y

  Univ. Hyogo Himeji‐shi Jpn

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著作論文

• Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
• 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
• Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
• First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance

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