Itoh Atsushi | Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

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概要

• 同名の論文著者
• Department Of Electrical And Electronic Engineering Tokyo Institute Of Technologyの論文著者

関連著者

• Asada Masahiro

  Department of Neurosurgery, Chibune Hospital

• Itoh Atsushi

  Department of Arrhythmia and Electrophysiology, Shizuoka Saiseikai General Hospital

• Itoh Atsushi

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Asada Masahiro

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Itoh Atsushi

  Department Of Applied Chemistry Tokai University

• Saito W

  Tokyo Inst. Technol. Tokyo Jpn

• Saito Wataru

  Institute Of Agriculture And Forestry University Of Tsukuba

• SAITOH Wataru

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Itoh A

  Ricoh Co. Ltd. Miyagi Jpn

• Saitoh Wataru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Saito W

  Toshiba Corp. Kawasaki Jpn

• Itoh A

  Tokyo Inst. Technol. Tokyo Jpn

• YAMAGAMI Shigeharu

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• YAMAGAMI Shigeharu

  Silicon Systems Research Labs.

• Yamazaki K

  Ntt Corp. Kanagawa Jpn

• Saitoh Masayuki

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Yamazaki K

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki Katsuyuki

  The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.

• YAMAZAKI Katsuyuki

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• TSUTSUI Masafumi

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Tsutsui M

  Tokyo Inst. Technol. Tokyo Jpn

• Tsutsui Masafumi

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

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著作論文

• Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
• 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
• Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
• A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transister on Separation-by-Implanted-Oxygen Substrate

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