35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-15

著者

• Asada Masahiro

  Department of Neurosurgery, Chibune Hospital

• Itoh Atsushi

  Department of Arrhythmia and Electrophysiology, Shizuoka Saiseikai General Hospital

• Itoh Atsushi

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Asada Masahiro

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Saito W

  Tokyo Inst. Technol. Tokyo Jpn

• Saito Wataru

  Institute Of Agriculture And Forestry University Of Tsukuba

• SAITOH Wataru

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Itoh A

  Ricoh Co. Ltd. Miyagi Jpn

• YAMAGAMI Shigeharu

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Saitoh Wataru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Saito W

  Toshiba Corp. Kawasaki Jpn

• Itoh A

  Tokyo Inst. Technol. Tokyo Jpn

• YAMAGAMI Shigeharu

  Silicon Systems Research Labs.

• Itoh Atsushi

  Department Of Applied Chemistry Tokai University

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