Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon

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概要

• 論文の詳細を見る

• We have analyzed a very short channel tunneling field effect transistor which uses new heterostructures (CoSi_2/Si/CdF_2/CaF_2) lattice-matched to the Si substrate. In device operation, the drain current from source (CoSi_2) to drain (CoSi_2) through tunnel barriers (Si) and the channel (CdF_2) is controlled by a gate electric field applied to the barrier between the source and the channel through the gate insulator (CaF_2). Theoretical analysis shows that this transistor has characteristics similar to those of conventional metal-oxide-semiconductor field effect transistors even with channel lengths as short as 5nm. In addition, we have estimated the theoretical response time of this transistor and showed the possibility of subpicosecond response.

• 社団法人電子情報通信学会の論文
• 1998-12-25

著者

• Yamazaki K

  Ntt Corp. Kanagawa Jpn

• Saito W

  Tokyo Inst. Technol. Tokyo Jpn

• Saito Wataru

  Institute Of Agriculture And Forestry University Of Tsukuba

• Asada Masahiro

  the Faculty of Engineering, Tokyo Institute of Technology

• Yamazaki K

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki Katsuyuki

  The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.

• Saito W

  Toshiba Corp. Kawasaki Jpn

• SAITOH Wataru

  the Faculty of Engineering, Tokyo Institute of Technology

• TSUTSUI Masafumi

  the Faculty of Engineering, Tokyo Institute of Technology

• Tsutsui M

  Tokyo Inst. Technol. Tokyo Jpn

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