Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
スポンサーリンク
概要
- 論文の詳細を見る
A novel method of direct media conversion from an optical signal to a terahertz (THz) signal using free carriers generated by photons and the skin effect is proposed. A semiconductor modulator absorbs modulated optical signals and generates free carriers. These free carriers inside the modulator absorb THz waves owing to the skin effect, thereby creating an inverted pattern signal of the THz wave with respect to the optical signal. In preliminary experiments using 192 GHz continuous waves and a 1.55 μm optical signal, a modulation depth of 45% and a modulation speed of up to 1 MHz were demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-09-25
著者
-
Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Numajiri Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Yokoyama Ryo
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Asada Masahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
関連論文
- Cervical Epidural Abscess Presenting with Brown-Sequard Syndrome in a Patient with Type 2 Diabetes
- Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect
- Cerebellopontine Angle Ependymoma with Internal Auditory Canal Enlargement and Pineal Extension : Case Report
- Subependymoma in the Lateral Ventricle Incidentally Detected by Routine Brain Examination : Case Report
- Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
- Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
- Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
- 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
- Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Resonant Tunneling Diodes in Si/CaF_2 Heterostructures Grown by Molecular Beam Epitaxy
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Theoretical Gain of Quantum-Well Wire Lasers
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transister on Separation-by-Implanted-Oxygen Substrate
- Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor
- Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
- Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Postpartum subarachnoid hemorrhage due to Moyamoya disease associated with renal artery stenosis
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Intergrated with Patch Antenna
- Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Formation of Silicon and Cobalt Silicide Nanoparticles in CaF_2
- Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
- GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
- 85 °C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer
- Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits
- Retroperitoneal Fibrosis in a Patient with Gastric Cancer Manifested by Lower Extremity Edema and Hydrocele
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111)
- Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
- 10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna
- Spectral Characteristics of Linewidth Enhancement Factor $\alpha$ of Multidimensional Quantum Wells
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate
- Theoretical analysis of the damping effect on a transistor laser
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions