Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits
スポンサーリンク
概要
- 論文の詳細を見る
Low-power and compact optical interconnects can be realized using III--V membrane photonic integrated circuits fabricated from thin InP-based films bonded to a Si wafer using benzocyclobutene (BCB) adhesive wafer bonding method. However, the conditions of the bonding and fabrication process strongly affect the propagation loss of waveguides. This study investigated the process conditions during bonding and waveguide fabrication with a view to reducing the propagation loss. It was found that clean, large GaInAsP thin films without air voids or fractures could be obtained by using an appropriate solvent volatilization time of 20--30 min at 200 °C for BCB. Furthermore, by using a resist with high dry etching resistance and an SiO2 mask for the etching process, the sidewall roughness of the waveguide was significantly reduced, which finally afforded a waveguide propagation loss as low as 4 dB/cm.
- 2012-04-25
著者
-
Lee Jieun
Department Of Chemical Engineering Sungkyunkwan University
-
Takino Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Atsumi Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
TAKINO Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Maeda Yasuna
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Arai Sigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
関連論文
- Effect of Supplementation of Vitamin E and Vitamin C on Brain Acetylcholinesterase Activity and Neurotransmitter Levels in Rats Treated with Scopolamine, an Inducer of Dementia
- Degradation of Acetone and MEK Using a Biofilter Packed with a Ceramic-type Medium
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
- GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
- 85 °C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer
- Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- 10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
- Theoretical analysis of the damping effect on a transistor laser
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions