Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
スポンサーリンク
概要
- 論文の詳細を見る
The monolithic integration of a distributed reflector (DR) laser with a front power monitor was realized for the first time, where quantum wirelike active regions were used to obtain the partial absorption necessary for monitoring the photodetector. The electrical isolation between the laser and power monitor sections was realized by deep (3.8 μm) and narrow (500 nm) groove etching, and a moderately high optical transmittivity of about 95% and a very high isolation resistance of 60 M$\Omega$ were achieved.
- Japan Society of Applied Physicsの論文
- 2007-10-25
著者
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Otake Masato
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Lee SeungHun
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Otake Masato
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Suemitsu Ryo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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