Nishiyama Nobuhiko | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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概要
- Nishiyama Nobuhikoの詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japanの論文著者
関連著者
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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雨宮 智宏
東京大学先端科学技術研究センター
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Otake Masato
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Lee SeungHun
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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PLUMWONGROT Dhanorm
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Oda Manabu
Department Of Geriatric Pharmacology And Therapeutics Graduate School Of Pharmaceutical Sciences Chi
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Kondo Daisuke
Department Of Chemical Reaction Engineering Nagoya City University
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Nishimoto Yoshifumi
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Lee Seung
Quantum-functional Semiconductor Research Center Dongguk University
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Sato Takashi
Department Of Applied Biochemistry And Food Science Saga University
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Tamura Yosuke
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Kurokawa Munetaka
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Lee SeungHun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ito Hitomi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Takino Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Shirao Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Naitoh Hideyuki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sakamoto Shinichi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ohtake Mamoru
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kang JoonHyun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Atsumi Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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TAKINO Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kondo Daisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Otake Masato
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ullah Saeed
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Manabu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Suemitsu Ryo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Maruyama Takeo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove