GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
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概要
- 論文の詳細を見る
We fabricated a membrane buried heterostructure distributed feedback (BH-DFB) laser with an air-bridge structure by selectively etching a sacrificial layer. A continuous wave (CW) operation under optical pumping was attained from 10 up to 80 °C, and a minimum threshold pump power of 4.3 mW was obtained at 20 °C. From the pump-power dependence of the lasing wavelength, the thermal resistance of this air-bridge membrane structure was estimated to be 11 K/mW, which is approximately half that of a previously reported structure (23 K/mW) fabricated by direct wafer bonding on another InP substrate.
- 2007-12-25
著者
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Naitoh Hideyuki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sakamoto Shinichi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ohtake Mamoru
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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