Theoretical analysis of the damping effect on a transistor laser
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概要
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The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×1017cm3), as well as for a maximum modulation bandwidth of 45GHz.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato Noriaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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