Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
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概要
- 論文の詳細を見る
Loss reduction methods for single-mode photonic wire in silicon-on-insulator were investigated, with a Si core size of $200\times 440$ nm2, fabricated with electron beam lithography and dry etching, using a double layer of electron beam (EB) resist mask. The transverse electric (TE) mode propagation loss measured at a wavelength of 1550 nm was 4.5 dB/cm, which is, to the best of our knowledge, the lowest value ever attained for a Si wire waveguide fabricated by the parallel plate reactive ion etching (RIE) method.
- 2009-03-25
著者
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Sakamoto Shinichi
Department Of Electrical Engineering Yamanashi University
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Inoue Keita
Department Of Computer Science School Of Electrical And Computer Engineering National Defense Agency
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Plumwongrot Dhanorm
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Enomoto Haruki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Tamura Shigeo
Technical Department, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Maruyama Takeo
School of Electrical and Computer Engineering, College of Science and Engineering, Kanazawa University, Kanazawa 920-1192, Japan
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Sakamoto Shinichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Inoue Keita
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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