Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure
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概要
- 論文の詳細を見る
Room-temperature continuous-wave operation under optical pumping was demonstrated using GaInAsP/InP membrane distributed feedback (DFB) lasers directly bonded on a silicon-on-insulator (SOI) substrate formed with a rib-waveguide structure. A threshold pump power of 11.3 mW and a submode suppression ratio of 29 dB were obtained for a cavity length of 140 μm and a stripe width of 1.5 μm. Light output was obtained through a 500 μm-long SOI waveguide.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sakamoto Shinichi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kanemaru Masaki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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