Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate

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概要

• 論文の詳細を見る

• New structural designs are adopted to reduce the waveguide loss and increase the internal quantum efficiency of lateral current injection lasers consisting of a thin GaInAsP core layer grown on a semi-insulating InP substrate. This led to a drastic reduction in the threshold current. Room temperature continuous-wave operation has been successfully realized with a threshold current of 11 mA and an external differential quantum efficiency of 33% for a stripe width of 1.7 μm and a cavity length of 720 μm.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-04-25

著者

• Hitomi Ito

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Tadashi Okumura

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Okumura Tadashi

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

• Ito Hitomi

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Kondo Daisuke

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Nobuhiko Nishiyama

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Shigehisa Arai

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Daisuke Kondo

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

関連論文

• Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
• GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
• Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
• Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
• Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure
• Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate

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