Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate
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概要
- 論文の詳細を見る
Wafer bonding technology was investigated to integrate active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI substrate was successfully obtained by a direct bonding with thermal annealing at 300–450 °C in H2 atmosphere. The photoluminescence intensity of the SQW membrane structure did not degrade after this direct bonding and its spectral shape did not change. This wafer bonding technique can be applied to the realization of direct optical coupling using SOI passive waveguides from a membrane's active region.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-11-15
著者
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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